[19p-437-1~15] 9.5 New functional materials and new phenomena

[19p-437-1] [Young Scientist Presentation Award Speech] Controlling Surface Magnetotransport Properties of a Topological Insulator with a Dual Gate Device

〇Tetsuro Misawa^1,2, Yasuhiro Fukuyama², Shuji Nakamura², Yuma Okazaki², Nariaki Nasaka¹, Nobu-Hisa Kaneko², Chiharu Urano², Takao Sasagawa¹ (1.Tokyo Tech, 2.AIST/NMIJ)

Keywords:topological insulator, gate controle, electron beam lithography

The topological insulator is expected to be applied for electronic and spintronic devices. Every surface of a topological insulator allows a current flow, and it is quite important to control conduction carriers on each surface for practical purposes. In this study, we fabricated the dual gate device with a thin flake of a topological insulator Sn-BSTS that can control the Fermi levels on the top and bottom surfaces independently. In this talk, we will report the results of control of polarization and magnetotransport properties of Sn-BSTS.