[19p-CE-1~4] JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

▲ [19p-CE-2] Crystal plane dependence of interface states density in c- and m-plane GaN MOS capacitors

〇Manato Deki¹, Yuto Ando², Hirotaka Watanabe¹, Atsushi Tanaka^1,3, Maki Kushimoto², Shugo Nitta¹, Yoshio Honda¹, Hiroshi Amano^1,4,5 (1.IMaSS Nagoya Univ., 2.Nagoya Univ., 3.NIMS, 4.ARC, 5.Nagoya Univ. VBL)

Keywords:GaN, MOS devices, Interface state density