[19p-PA4-1~27] 15.4 III-V-group nitride crystals

[19p-PA4-10] Study of surface contamination on single-crystalline GaN layer (１)

〇Ai Mizuno¹, Masaki Iwamoto¹, Osada Takuya¹, Reo Suzuki¹, Ki Ando¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

Keywords:GaN layer, XPS, surface contamination

In this work, our group demonstrate the GaN surface contamination focused on Si-based compounds contained in air. We analyzed the air exposed GaN surface using X-ray photoelectron spectroscopy (XPS). As a result, Si components was detected from the GaN surface. Also, we tried the GaN surface cleaning by heat treatment.