The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-PA4-1~27] 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 1:30 PM - 3:30 PM PA (Event Hall)

1:30 PM - 3:30 PM

[19p-PA4-18] Synthesis of Gan Crystal Using Gallium Hydride

〇(B)Mei Kanda1, Hiroshi Nagayoshi1 (1.NITTC)

Keywords:GaN, HVPE, hydrogen radical

We have been tried to grow GaN by using gallium hydride generated by the reaction of hydrogen radical with metallic gallium. The previous method using hot filament had a possibility of contamination by the evaporated filament.
We have developed the catalytic HVPE method, which effectively generate hydrogen radicals at 1000 ° C.
As a result, clear crystalline GaN growth could be observed.