[19p-PA4-1~27] 15.4 III-V-group nitride crystals

[19p-PA4-22] Lifetime of NiO/AlGaN/n-GaN photoanodes for high-efficient solar water splitting

〇Kazuhide Kumakura¹, Yuya Uzumaki², Yoko Ono², Takeshi Komatsu² (1.NTT BRL, 2.NTT DTL)

Keywords:solar water splitting, nitride-based semiconductor

For solar water splitting, nitride-based semiconductors are promising materials as the photoabsorption layer of the photoanodes in photoelectrochemical system. For the high-efficient energy conversion from solar energy into chemical one, we have investigated the formation method of the NiO co-catalyst, the rate-determining step of the reaction, and the photoabsorption layer structures. Here, we report on key factors for the lifetime in the GaN-based photoelectrochemical system.