Temperature dependence of InN grown by Radio Frequency - Molecular Beam Epitaxy

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 1:30 PM - 3:30 PM PA (Event Hall)

1:30 PM - 3:30 PM

〇Hiroki Yamaki¹, Takahiro Imai¹, Masahiro Hemmi¹, Toshiki Makimoto¹ (1.Waseda Univ.)

Keywords:Semiconductor, InN, MBE