[19p-PA4-1~27] 15.4 III-V族窒化物結晶

▲ [19p-PA4-3] Band Alignment of h-BN/Al_0.7Ga_0.3N heterojunction determined by x-ray photoelectron spectroscopy

〇GUODONG HAO¹、Sachiko Tsuzuki¹、Shin-ichiro Inoue¹ (1.NICT)

キーワード：AlGaN, h-BN, band offset

Al_xGa_1-xN alloy is currently used in ultraviolet (UV) and deep-UV light emitters, but it is still a big challenge to achieve high conductivity and form good ohmic contact to metal electrode due to the poor p-type doping efficiency of Al_xGa_1-xN with high Al fraction. Hexagonal boron nitride (h-BN) is a promising material to serve as p-type layer owing to its high transparency to deep-UV light and its facility of p-type doping. Band offset is one of the most important parameters in the design of the optoelectronic devices since it can determine the carrier transport and injection within the devices. However, the valence and conduction band offsets between the h-BN and Al_xGa_1-xN has not been identified. In this talk, we report the valence and conduction band offsets at the interface of h-BN/Al_0.7Ga_0.3N heterojunction.