[19p-PA5-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [19p-PA5-4] Passivation of nanopillar Si surface by ALD-Al₂O₃ and its effect on PV performance of PEDOT:PSS/n-Si solar cells

〇Md Enamul Karim¹, R. Ishikawa¹, K. Ueno¹, H. Shirai¹, S. Kurosu², Y. Nakajima², Y. Fujii², M. Tokuda², T. Hanajiri² (1.Saitama University, 2.Toyo University)

Keywords:ALD, nanopillar, AFM

We have reported improvement of device performance by bonding graphene oxide and ferroelectric polymer P (VDF - TrFE) ultrathin layer to the interface of PEDOT: PSS junction solar cell on planarized N - Si (100) In this study, the influence of planarization and atomic layer growth (ALD) -AlOx in Si nanopillar on PEDOT: PSS / n - Si interface physical properties was discussed.