[19p-PA8-1~12] 9.4 Thermoelectric conversion

[19p-PA8-12] Simulation of potential distribution of Si wire prepared on SOI wafer

〇(M1)Taketo Kawai^1,2, Yuhei Suzuki^1,2, Akito Oka^1,2, Yuya Himeda³, Hiroki Takezawa³, Takehiro Kumada³, Keisuke Shima³, Motohiro Tomita³, Hirokazu Tatsuoka², Salleh Faiz⁴, Hiroshi Inokawa^1,2, Takeo Matsuki^3,5, Takashi Matsukawa⁵, Takanobu Watanabe³, Hiroya Ikeda^1,2 (1.RIE, Shizuoka Univ., 2.Shizuoka Univ., 3.Waseda Univ., 4.Univ. of Malaya, 5.AIST)

Keywords:Kelvin probe force microscopy, Simulation of potential distribution, SOI

We propose a measurement technique with KFM as a new method to measure the Seebeck coefficient of nanostructures. Actually, Si wire of micrometer order is fabricated on SOI (Si on insulator) substrate. When the surface potential distribution was measured by KFM, an image with an increased potential at the edge of the Si wire was obtained. As this factor, the influence of trapped charge in the sample and wraparound of electric flux lines is considered. Using COMSOL Multiphysics, we clarify the cause of the unique potential distribution observed by KFM.