[19p-PB1-1~37] 6.3 Oxide electronics

[19p-PB1-20] Au/CuOx/(CuxNiySiz)mOn/NixSi/n-Si-Structured Resistive Nonvolatile Memory

〇Koki Nakayama¹, Jian Min Chai¹, Takahiro Tsukamoto², Akihiro Saiga³, Itaru Kato³, Toshiyuki Sameshima¹, Yoshiyuki Suda¹ (1.Graduate School of Eng. Tokyo Univ. of Agric. & Technol., 2.Univ. Electro-Comm., 3.NIT, Tokyo College)

Keywords:Resistive Random Access Memory

In this study, we obtained high on / off current ratio in memory device with Au / CuOx / (CuxNiySiz) mOn / NixSi / n - Si structure using two kinds of metal materials different from Cu and Ni, and by controlling the composition of CuOx the current value in the off state has been successfully controlled. This time we will propose composition of the NixSi and propose a new resistance variable type nonvolatile memory in which the current value in the on state is controlled. Its basic operating characteristics are shown and the operating principle is discussed.