[19p-PB1-1~37] 6.3 Oxide electronics

[19p-PB1-25] Electrical and Structural Properties of Ti_0.9Fe_0.1O_2-δ Thin Film Prepared by RF Magnetron Sputtering

〇(M1)Junichiro Ishida¹, Daiki Nishioka¹, Tunetomo Yamada¹, Ryu Yukawa², Kouji Horiba², Hirishi Kumigashira², Toru Higuchi¹ (1.Tokyo Univ.Sci, 2.KEK)

Keywords:oxside semiconductor

We have prepared the crystallized and amorphous Ti0.9Fe0.1O2-δ thin film with cross point structure by RF magnetron sputtering. In this presentation, we report the neuromorphic memory device in addition to I-V curves.