[19p-PB6-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19p-PB6-7] Growth of AlGaInP Multilayer Reflector for Optical Wireless Power Receiving Devices

〇Masakazu Arai¹, Shinnosuke Tsuboyama¹, Kensuke Hiwada¹, Ryosuke Wakaki¹, Koji Maeda¹ (1.Univ. of Miyazaki)

Keywords:Optical wireless power transmission system

Optical wireless power transmission enables long distance safety electric power supply. To increase the power conversion efficiency of transmission system, it is important to newly develop a photovoltaic receiver for monochromatic laser light. High energy (short wavelength) light is effective to increase the conversion efficiency. InAlGaP is widest direct bandgap for III-V semiconductor materials. However, CuPt type ordering reduces its bandgap. To suppress the ordering and obtain high energy bandgap, we used GaAs(311)B substrate.