[19p-PB8-1~23] 21 Joint Session K (Poster)

[19p-PB8-12] Study on band alignment at α-Ir₂O₃/α-Ga₂O₃ hetero-pn-junction

〇Shinichi Kan¹, Syu Takemoto¹, Kentaro Kaneko¹, Takashi Shinohe², Shizuo Fujita¹ (1.Kyoto Univ., 2.FLOSFIA INC.)

Keywords:Gallium oxide, p-type oxide semiconductor, Band alignment

An α-Ga₂O₃ is expected to be future power device materials, supporting a future energy-saving society. Several studies on n-type Ga₂O₃ unipolar devices have extensively reported. However, it is very difficult to prepare p-type Ga₂O₃ and fabricate homo p-n junction, which encourages an evolution of new materials that can form high-quality hetero-junctions with Ga₂O₃. In this work, we focused on corundum-structured iridium oxide (α-Ir₂O₃) as a candidate material showing p-type conductivity. The determination of band offset values and type of band alignment at the α-Ir₂O₃/α-Ga₂O₃ hetero-junction is essential to pave the way for its power device application. We have calculated the valence band offset and the conduction band offset values at the hetero-junction using X-ray photoelectron spectroscopy.