[19p-PB8-1~23] 21 Joint Session K (Poster)

[19p-PB8-3] Carrier conduction improvement on ZnO nano-particle layers by trial of Ga-doping

〇Toshiyuki Yoshida¹, Maruful Islam Md², Yasuhisa Fujita¹ (1.Shimane Univ. Natural, 2.Shimane Univ. Sci&Eng.)

Keywords:zinc oxide, particle layer, Ga-doping

Objective of this study are formation of ZnO nano-particle layers by spray method and their application of channel layer for thin-film-transistors. Recently, we demonstrated the operations of not only n-channel TFTs but also p-channel TFTs, however, extremely high resistivity (mega-ohm/sq - giga-ohm/sq) is one of critical issues for the progress. In this presentation, by annealing the ZnO nano-particles with Ga₂O₃ particles, dramatically reduction of resistivity of particle layers with a minimum value of 225 ohm/sq can be achieved.