[19p-PB8-1~23] 21 Joint Session K (Poster)

[19p-PB8-4] Effect of passivation layers on characteristics of p-channel SnO_x thin-film transistors

〇Masaki Miki¹, Hiroki Iwata¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

Keywords:oxide semiconductor, oxide thin film transistor

In this work, SnOx TFTs with SiO2 passivation layers were fabricated and we investigated the effects of passivation layers on transistor characteristics and annealing condition dependency. In the TFTs with passivation layers, the off current decreased and the on/off ratio increased compared to TFTs without passivation layer. The mobility is also improved to 0.62 cm² V^-1 s^-1 as compared with the TFT without passivation layer. In this way, passivation layer and annealing in N2 after moderate annealing in Air are effective for improving the characteristics.