The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 141 (141+142)

Katsuhiro Kutsuki(Toyota Central R&D Labs.)

9:30 AM - 9:45 AM

[20a-141-3] Insight into performance enhancement of SiC MOSFET by Ba incorporation into SiO2/SiC interface

Eigo Fujita1, 〇Takuji Hosoi1, Mitsuru Sometani2, Tetsuo Hatakeyama2, Shinsuke Harada2, Hiroshi Yano3, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.AIST, 3.U. Tsukuba)

Keywords:SiC, MOSFET, mobility