Spontaneous Polarization in GaN Substrate Directly Observed by Ga-NMR

Ryo Kusanagi; Kohei Suzuki; Susumu Sasaki; Yusuke Mori; Maki Kushimoto; Hiroshi Amano; Kenji Shiraishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-146-1~12] 15.4 III-V-group nitride crystals

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Yoshio Honda(Nagoya Univ.), Ryota Ishii(Kyoto Univ.)

9:15 AM - 9:30 AM

[20a-146-2] Spontaneous Polarization in GaN Substrate Directly Observed by Ga-NMR

Ryo Kusanagi¹, Kohei Suzuki¹, 〇Susumu Sasaki², Yusuke Mori^3,5, Maki Kushimoto⁴, Hiroshi Amano⁵, Kenji Shiraishi⁵ (1.Niigata Univ. Grad., 2.Niigata Univ. Eng., 3.Osaka Univ. Eng., 4.Nagoya Univ. Eng., 5.Nagoya Univ. IMaSS)

Keywords:GaN substrate, spontaneous polarization, direct observation

We report on the direct observation of spontaneous polarization in GaN substrate. To the best of our knowledge, this the first report all over the world.