The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-146-1~12] 15.4 III-V-group nitride crystals

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Yoshio Honda(Nagoya Univ.), Ryota Ishii(Kyoto Univ.)

9:30 AM - 9:45 AM

[20a-146-3] Growth of relaxed thick InGaN layer and its evaluation ３

〇Yuki Inomata1, Rei Kawamura2, Shintaro Nakashima2, Hideyuki Itakura1, Satoru Fujimoto1, Hiroki Ikeuchi1, Narihito Okada1, Kazuyuki Tadatomo1 (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 2.Department of Eng.,Yamaguchi Univ.)

Keywords:MOVPE, InGaN