Study of thick BGaN crystal growth by MOVPE and fabrication of vertical neutron detection device

Takayuki Maruyama; Yuri Takahashi; Natuki Yamada; Kazushi Ebara; Ken Mochizuki; Hisaya Nakagawa; Shigeyoshi Usami; Yoshio Honda; Hiroshi Amano; Kazunobu Kojima; Shigefusa Chichibu; Yoku Inoue; Toru Aoki; Takayuki Nakano

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-146-1~12] 15.4 III-V-group nitride crystals

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Yoshio Honda(Nagoya Univ.), Ryota Ishii(Kyoto Univ.)

10:15 AM - 10:30 AM

[20a-146-6] Study of thick BGaN crystal growth by MOVPE and fabrication of vertical neutron detection device

〇Takayuki Maruyama¹, Yuri Takahashi¹, Natuki Yamada¹, Kazushi Ebara¹, Ken Mochizuki¹, Hisaya Nakagawa¹, Shigeyoshi Usami², Yoshio Honda³, Hiroshi Amano^3,4, Kazunobu Kojima⁵, Shigefusa Chichibu^3,5, Yoku Inoue¹, Toru Aoki⁶, Takayuki Nakano¹ (1.Shizuoka Univ., 2.Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.Akasaki Research Center., 5.IMRAM, Tohoku Univ., 6.R.I.E Shizuoka Univ.)

Keywords:BGaN, MOVPE