The 79th JSAP Autumn Meeting, 2018

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[20a-222-1~12] 6.3 Oxide electronics

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 222 (222)

Masumi Saitoh(Toshiba Memory), Tohru Tsuruoka(NIMS)

11:30 AM - 11:45 AM

[20a-222-10] Enhancement of resistance modulation ratio by reduction of channel size in SmNiO3-FET

〇Daiki Kawamoto1, Azusa Hattori1,2, Mahito Yamamoto1, Hidekazu Tanaka1 (1.Osaka Univ., 2.JST-PRESTO)

Keywords:SmNiO3, Non-volatile memory, electric double layor