[20a-222-1~12] 6.3 Oxide electronics

△ [20a-222-2] Interfacial Control of Electronic Transport at Pt/Nb:SrTiO₃ Junctions Using Thin Uniform Layers of TaO_x

〇Yusuke Tsuta¹, Atsushi Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

Keywords:ReRAM(interface type), schottoky barrier, Nb doped STO

We examined the control of the junction characteristics by the interfacial engineering method for Pt / Nb: SrTiO 3 (001) junctions. Using TaOx which can form a very flat structure between metal and oxide, we tried to control the electrical characteristics by its oxidation degree and film thickness. As a result, depending on the degree of oxidation of TaOx, the conduction characteristics of Pt / TaOx / Nb: STO junction can be controlled systematically from ohmic to Schottky junctions. At the same time, the resistance switching caused by the modulation of the barrier height is also successfully controlled.