Identification of switching area by infrared thermal imaging technique in Pt/Nb:SrTiO<sub>3</sub> interface-type ReRAM

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 222 (222)

9:30 AM - 9:45 AM

〇Katsuyuki Ochiai^1,2, Kentaro Kinoshita¹, Takumi Kaneko¹, Mutsunori Uenuma³, Yukiharu Uraoka³ (1.Tokyo Univ. of Science, 2.Tottori Univ., 3.NAIST)

Keywords:resistive random-access memory, Nb:SrTiO3, perovskite