[20a-222-1~12] 6.3 Oxide electronics

△ [20a-222-4] Realization of multilevel memory characteristics of Ta₂O_5-δ ReRAM with Cu top electrode applied

〇Yuanlin Li¹, Reon Katsumura¹, Mika Gronroos¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Andoh², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

Keywords:Resistive Memory, Multi-value Switching, Tantalum oxide

Being a profound candidate for AI, machine learning based neural networks have been drawing attentions from many fields. Like enormous and yet efficient synaptic connections in a human brain, synapse-like device units are essential for the hardware approaches to neural networks. We have already reported with Ta top electrode applied and optimizing the fabrication conditions, repeatability for MS and stability in Ta₂O_5-δ based ReRAM were proved improvable. This time, to investigate the further switching mechanism, we used Cu as top electrode and compared the differences.