[20a-222-1~12] 6.3 Oxide electronics

△ [20a-222-7] In-situ observation of Cu filament’s shape in MoO_x/Al₂O₃ double layer CBRAM

〇ryusuke ishikawa¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Masaki Kudo², Syo Matsumura² (1.Hokkaido Univ., 2.Kyushu Univ.)

Keywords:CBRAM, in-situ TEM, ReRAM

Resistive random access memory (ReRAM) is a potential candidate for next generation memory. But, to put the ReRAM into practical use, exploring the mechanism and cause of degradation is required for high reliable device. Especially, some of the papers suggest that electrical characteristics of conductive bridging RAM (CBRAM) having the Cu top electrode, one of the ReRAMs, are great influenced by plural conductive filaments (CFs) and its shape and it is being studied. In this study, in-situ TEM was applied to the MoO_x/Al₂O₃ bilayer CBRAM, and the change of the Cu-CF shape in the Al₂O₃ layer during formation and rupture process were observed in nanometer scale.