[20a-224A-1~10] 3.7 Laser processing

[20a-224A-5] SEM Analysis of Crystalline Defects Induced in Si by stealth dicing

Daisuke Kawaguchi¹, Hiroyuki Iwata², 〇Hiroyasu Saka² (1.Hamamatsu Photonics, 2.Aichi Institute of Technology)

Keywords:laser irradiation, void, stealth dicing

Modified volume induced in Si by stealth dicing consists of voids, tiny cracks, glide-set dislocations and a chimney-like structure piercing voids, tiny cracks, glide-set dislocations. Among them voids are not accompanied with any lattice defects and strain. In other words, Si atoms which existed in a void disappeared. In order to identify the whereabouts of the missing Si atoms, surfaces of a Si wafer wee examined in detail by SEM.