[20a-235-1~8] 13.8 Optical properties and light-emitting devices

[20a-235-1] Analysis of photoluminescence properties of the quantum dot using quantum annealing

Hiroto Hakamata¹, 〇Tomah Sogabe^1,2, Koichi Yamaguchi^1,2 (1.UEC, 2.UEC i-PERC)

Keywords:quantum annealing, quantum dot, photoluminescence properties

In the conventional quantum annealing method, it is common to utilize quantum spin based ising-model.In this study we develope the quantum temperature type quantum annealing methond baseon on quantum phase transition between excitons in the system of quantum dots. The method is applied to the experimental analysis of the emission characteristics of the high density InAs quantum dot layer on GaAsSb / GaAs (001), and the verification result by the feature reproduction of the PL intensity spectrum of quantum dot from which the quantum phase transition originates is reported.