[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-12] Mapping of facet growth n-GaN Schottky contacts using scanning internal photoemission microscopy

Masataka Maeda¹, 〇Kenji Shiojima¹, Kaori Kurihara² (1.Univ. of Fukui, 2.Mitsubishi Chemical)

Keywords:GaN, Facet growth, Scanning internal photoemission microscopy

We characterized facet growth n-GaN wafers by SIPM method. SIPM detected the difference between facet and C-face growth regions in the photocurrent map at wavelength of 375 nm.