12:00 PM - 12:15 PM
[20a-331-12] Mapping of facet growth n-GaN Schottky contacts using scanning internal photoemission microscopy
Keywords:GaN, Facet growth, Scanning internal photoemission microscopy
We characterized facet growth n-GaN wafers by SIPM method. SIPM detected the difference between facet and C-face growth regions in the photocurrent map at wavelength of 375 nm.