[20a-331-1~13] 13.7 Compound and power electron devices and process technology

△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN

〇Kazutaka Kanegae¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

Keywords:GaN, hole trap, ICTS

For an accurate and simple evaluation method of H1 trap concentration, we have performed optical ICTS on GaN SBD. The hole occupancy ratio during light irradiation which is necessary for obtaining the H1 trap concentration was difficult from only optical ICTS. In this study, the hole occupancy ratio was evaluated from the comparison of current injection and optical ICTS on GaN PND, and the ratio of the photoionization cross section for electrons and holes was obtained. The ratio makes it possible to calculate the hole occupation ratio for arbitrary sample and measurement condition.