10:45 AM - 11:00 AM
△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN
Keywords:GaN, hole trap, ICTS
For an accurate and simple evaluation method of H1 trap concentration, we have performed optical ICTS on GaN SBD. The hole occupancy ratio during light irradiation which is necessary for obtaining the H1 trap concentration was difficult from only optical ICTS. In this study, the hole occupancy ratio was evaluated from the comparison of current injection and optical ICTS on GaN PND, and the ratio of the photoionization cross section for electrons and holes was obtained. The ratio makes it possible to calculate the hole occupation ratio for arbitrary sample and measurement condition.