The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-438-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 438 (3F_Lounge)

Shota Nunomura(AIST)

10:00 AM - 10:15 AM

[20a-438-5] Production process of ions in high power pulse sputtering discharge using titanium target

〇(M2)Kazunori Iga1, Takayuki Ohta1 (1.Meijo Univ.)

Keywords:high power impulse magnetron sputtering, energy-resolved mass spectrometry

In high power pulsed sputtering, which can realize high ionization rate and produce high energy ion, the energy distributions of Ar+ and Ti+ were measured with energy-resolved mass spectrometry and ionization process of sputtered species and gas species will be discussed. With increasing pulse width, total ion number of Ti+ increased and the peak of the high energy Ar+ was appeared. It is considered that recoiled Ar from the target was incident on the film.