The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-438-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 438 (3F_Lounge)

Shota Nunomura(AIST)

10:15 AM - 10:30 AM

[20a-438-6] Tribological properties of Si-doped DLC film deposited by dual magnetron sputtering

〇(M2)Yuki Miwa1, Akinori Oda2, Hiroyuki Kousaka3, Takayuki Ohta1 (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

Keywords:Si-DLC, sputtering, low friction

It has been reported that the silicon-doped DLC (Si-DLC) film exhibits low friction coefficient than the non-doped DLC film. In addition, a hydrogen-free DLC film deposited by using the physical vapor deposition method can also realize the reduction of the friction coefficient.
In this study, hydrogen-free Si-DLC films was deposited by dual magnetron sputtering method using carbon and silicon targets. Friction property of hydrogen-free Si-DLC film was evaluated.
It was suggested that when the Si content in the film becomes excessive, the structure of the DLC film becomes disordered and becomes a film which easily wears off.