[20a-PA4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[20a-PA4-11] Growth of beta-FeSi₂ thin films by co-sputtering with high purity Si and Fe targets

〇Tsuyoshi Yoshitake¹, Seiya Uchida¹, Yuki Tanaka¹, Tomohiro Nogami¹, Tomohiro Yoshida² (1.Kyushu Univ., 2.Fukuoka Pref. Inst.)

Keywords:semiconducting silicides, iron disilicide, sputtering

Beta-FeSi2 films were epitaxially grown on Si(111) substrates by co-sputtering with high purity Fe and Si targets. Since the electrical conductivity sensitively changed with a change in the chemical composition between Fe and Si, it was difficult to clearly find effects of employing the high purity targets. Further precise optimization of the chemical composition is required.