[20a-PA4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[20a-PA4-9] Structural characterization of CaSi₂ microstructure grown on Si (111)

〇Kenji Ito¹, Tetsu Ohsuna¹, Takashi Suemasu², Hideyuki Nakano¹ (1.TOYOTA CRDL, INC., 2.Univ. Tsukuba)

Keywords:Calcium Silicide, Reactive deposition epitaxy, layered structure

We prepared the CaSi₂ films using reactive deposition epitaxy on Si(111) substrates, and their layered structures were investigated. Althoug x-ray diffraction pattern of 10-nm-thick silicide layer showed the existence of only tr6-CaSi₂ layered structure, 2H-CaSi₂ was also observed with stacking fault by cross sectional STEM image. Calcium monosilicide region was also mixed in the silicide film, of which the thickness was more than about 20nm. It's important to
control the thickness of the silicide layer to obtain the disilicide.