[20a-PA5-1~14] 13.3 Insulator technology

[20a-PA5-8] Electron retention characteristics of metal-oxide-nitride-oxide-silicon-type nonvolatile memory devices

〇(M2)Takuro Kishida¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Keywords:electron retention characteristics, silicon nitride