[20a-PB4-1~8] 3.13 Semiconductor optical devices

[20a-PB4-2] Room temperature lasing of 1.5mm wavelength GaInAsP high-mesa laser diode on wafer bonded InP/Si substrate

〇Kazuki Uchida¹, Xu Han¹, Gandhi Kallarasan Periyanayagam¹, Hirokazu Sugiyama¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Hiromu Yada¹, Masaki Matsuura¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser, directly bonded, InP/Si substrate