[20a-PB4-1~8] 3.13 Semiconductor optical devices

[20a-PB4-8] Self-Modulation of a Laser Beam at the Band Edge of Silicon

Hiroki Miyabe¹, Yosuke Kawase¹, 〇Mitsunori Saito¹ (1.Ryukoku Univ.)

Keywords:Silicon, Optical modulation, Self-control

A laser beam of 1064 nm exhibited a nonlinear transmission characteristic when it passed through a silicon plate of 50 µm thickness. This nonlinearity originated from the following two phenomena; i.e., the silicon plate was heated by absorbing a portion of the laser power, and the laser beam absorbance changed as the interference peak shifted with the temperature change. Laser pulses of 830 nm exhibited a self-modulation phenomenon when they passed through a silicon plate of 30 µm thickness.