09:30 〜 11:30
▲ [20a-PB7-3] Tunable Quasi-Phase-Matching in Ion Implanted Silicon Waveguides
キーワード：ion implantation, Nonlinear frequency conversion, Silicon waveguides
Integrated silicon photonics is a rapidly growing technology area with applications reach from chip-to-chip interconnection to communication, sensing, light-field displays and numerous others. However, the high interest in silicon photonics is not due to prominent characteristics of silicon over alternative integrated-optics materials, but rather for integration of electrical and optical devices on a single chip in complementary-metal-oxide-semiconductor (CMOS) technology flow.
As a centrosymmetric crystal undoped silicon has third-order nonlinear susceptibility χ(3) ~ 10-19 m2/V2 and large Kerr nonlinear coefficient. Nevertheless, second-order susceptibility χ(2) would be highly desirable as it would allow the creation of electro-optic modulators and nonlinear waveguides. In this article, we describe a CMOS compatible quasi-phase-matched (QPM) periodically ion-implanted silicon waveguide for near- and mid-IR frequency conversion (second harmonic generation (SHG), sum and difference harmonic generation (SFG and DFG)) as well as for effective phase modulation and optical delay. Electric field-induced nonlinearity and QPM period can be tuned real-time by independently powered p-i-n junctions switching while extended frequency tuning achievable by geometry handling of p-n regions and ion implanted areas. For nitrogen implantation in dose 1018 cm-2 and energy of 200 keV followed by 1000 C annealing our waveguide structure shows up to 140 pm/V χ(2) nonlinearity and phase modulation efficiency less than VπL of 3 V*cm.
As a centrosymmetric crystal undoped silicon has third-order nonlinear susceptibility χ(3) ~ 10-19 m2/V2 and large Kerr nonlinear coefficient. Nevertheless, second-order susceptibility χ(2) would be highly desirable as it would allow the creation of electro-optic modulators and nonlinear waveguides. In this article, we describe a CMOS compatible quasi-phase-matched (QPM) periodically ion-implanted silicon waveguide for near- and mid-IR frequency conversion (second harmonic generation (SHG), sum and difference harmonic generation (SFG and DFG)) as well as for effective phase modulation and optical delay. Electric field-induced nonlinearity and QPM period can be tuned real-time by independently powered p-i-n junctions switching while extended frequency tuning achievable by geometry handling of p-n regions and ion implanted areas. For nitrogen implantation in dose 1018 cm-2 and energy of 200 keV followed by 1000 C annealing our waveguide structure shows up to 140 pm/V χ(2) nonlinearity and phase modulation efficiency less than VπL of 3 V*cm.