[20a-PB9-1~14] 6.2 Carbon-based thin films

[20a-PB9-4] Local structure analysis of Si-containing DLC films

〇Kazuhiro Kanda¹, Shuto Suzuki¹, Masahito Niibe¹, Takayuki Hasegawa^1,2, Hidetoshi Saitoh³ (1.LASTI, Univ. Hyogo, 2.SALLC, 3.Nagaoka Univ. Tech.)

Keywords:amorphous carbon film, Si-containing DLC film, near edge X-ray absorption fine structure

Si K-edge and C K-edge near edge X-ray absorption fine structure (NEXAFS) spectra of several Si-containing diamond-like carbon (Si-DLC) films, which had different composition ratios each other, were measured with the total electron yield mode at BL05A and BL09A in NewSUBARU synchrotron facility, respectively. The chemical states of C atoms in the Si-DLC film were shifted by the increase of Si/C ratio. On the other hand, those of Si atoms did not vary on the Si/C ratio, because only Si-C bond was only formed in the Si-DLC film in the region of Si/C ratio in this experiment. In other words, the formation of Si-Si bonds can be negligible.