[20p-131-1~8] 【CS.9】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▼ [20p-131-1] Voltage-driven magnetization switching using inverse-bias scheme

〇Tatsuya Yamamoto¹, Takayuki Nozaki¹, Hiroshi Imamura¹, Takuro Ikeura^1,2, Yoichi Shiota¹, Shingo Tamaru¹, Kay Yakushiji¹, Hitoshi Kubota¹, Akio Fukushima¹, Yoshishige Suzuki^1,3, Shinji Yuasa¹ (1.AIST, 2.Tsukuba Univ., 3.Osaka Univ.)

Keywords:voltage-controlled magnetic anisotropy, magnetization switching, magnetic tunnel junction

We study experimentally the voltage-driven magnetization switching using the inverse-bias scheme. We also employ detailed numerical simulations for understanding the magnetization dynamics and the dependence of WER.