[20p-131-9~13] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [20p-131-10] Electric-field control of spin transport property into InGaAs quantum dots from a tunnel-coupled quantum well

〇(D)Hang Chen¹、Junichi Takayama¹、Satoshi Hiura¹、Kazuhisa Sueoka¹、Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

キーワード：QD-QW tunnel-coupled structures, spin dynamics, photoluminescence

Remarkable advances of self-assembled semiconductor quantum dots (QDs) have been received significant attention as an ideal platform for strong confinements of the electronic and spin states. InGaAs-based QD-quantum well (QW) tunnel-coupled structures have been proposed to capture electron spin efficiently in layered device structures. In this research, external electric-field effects on spin injection of optically excited carriers in a QW into QDs are investigated. Spin-polarized electrons and holes in the QW are injected into the QDs through a GaAs barrier layer. We report time-resolved circularly polarized photoluminescence (PL) from QDs after optical generation of spins in the QW as a function of applied electrical field.