[20p-131-9~13] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [20p-131-11] Anisotropic spin lifetime depending on crystal orientation in GaAs/AlGaAs wire structures

〇(M1)Dai Sato¹、Daisuke Iizasa¹、Makoto Kohda^1,2、Junsaku Nitta^1,2 (1.Tohoku Univ.、2.CSRN)

キーワード：semiconductor, spintronics

Spin-orbit (SO) interaction is important in the field of semiconductor spintronics because the SO-induced effective magnetic field allows us to manipulate spins without external magnetic fields. Contrary to such benefits, k-dependent SO fields induce spin dephasing such as the D’yakonov Perel’ (DP) mechanism. Persistent spin helix (PSH) becomes an effective way to suppress the spin relaxation due to the special symmetry of SO fields where Rashba and Dresselhaus SO fields are comparable to each other. An observation of the helical spin mode in wires with highly focused Gaussian sigma width was reported by a previous research. However, the detailed analysis of the crystal orientation dependence on the spin relaxation in wires has not been unveiled. We clarify the decay mechanism in each crystal orientations from the viewpoint of the relative relationship between spin precession length and the sigma width.