[20p-131-9~13] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [20p-131-12] Spin relaxation in bulk GaSb with different thicknesses grown on GaAs substrates

〇Daisuke Tanaka¹、Lianhe Li²、Masaya Takizawa¹、Shima Tanigawa¹、Masayuki Iida¹、Edmund Linfield²、Atsushi Tackeuchi¹ (1.Waseda Univ.、2.Univ. of Leeds)

キーワード：spin, bulk GaSb, pump and probe measurement

GaSb grown on GaAs substrates has been studied extensively in recent years for potential device applications. In this study, we have investigated the spin relaxation in GaSb with different thicknesses grown on GaAs substrates. The observed spin relaxation times are different at different thicknesses. This indicates that the crystal qualities affect the spin relaxation.