[20p-131-9~13] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [20p-131-13] Observation of spin relaxation in Zn doped InP bulk with different doping concentrations

〇Masaya Takizawa¹、Daisuke Tanaka¹、Masayuki Iida¹、Shima Tanigawa¹、Atsushi Tackeuchi¹ (1.Waseda Univ.)

キーワード：spin relaxation, Zn doped InP, pump and probe measurement

The spin relaxation of semiconductors has attracted considerable attention owing to the enormous potential of spin-based devices, the so-called “spintronic devices”.Particularly, InP materials have found important applications, such as high-electron mobility transistors or optoelectric devices. However, the effect of doping on spin relaxation has not yet been clarified. In this study, we have investigated the carrier relaxation and spin relaxation in Zn doped InP bulk with different doping concentrations by time-resolved pump and probe reflection measurement.