[20p-131-1~8] 【CS.9】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▲ [20p-131-3] Improvement in perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy effect by Ir and W doping

〇Takayuki Nozaki¹, Tatsuya yamamoto¹, Hitoshi Kubota¹, Akio Fukushima¹, Yoshishige Suzuki^1,2, Shinji Yuasa¹ (1.AIST, 2.Osaka Univ.)

Keywords:Spintronics, Voltage-controlled magnetic anisotropy, Tunnel magnetoresistance

Voltage-controlled magnetic anisotropy (VCMA) effect is expected as a promising way of low power manipulation of spin. In this work, we report improvement of perpendicular magnetic anisotropy and VCMA efficienty by Ir and W doping in an ultrathin FeB/Fe free layer in magnetic tunnel junction. We found that W doping is effective to improve the perpendicular magnetic anisotropy and Ir doping enhance the VCMA coefficient by a factor of 4.7 compared with the standard structure.