[20p-131-1~8] 【CS.9】 10.1 新物質・新機能創成（作製・評価技術）, 10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術, 10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▲ [20p-131-3] Improvement in perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy effect by Ir and W doping

〇Takayuki Nozaki¹、Tatsuya yamamoto¹、Hitoshi Kubota¹、Akio Fukushima¹、Yoshishige Suzuki^1,2、Shinji Yuasa¹ (1.AIST、2.Osaka Univ.)

キーワード：Spintronics, Voltage-controlled magnetic anisotropy, Tunnel magnetoresistance

Voltage-controlled magnetic anisotropy (VCMA) effect is expected as a promising way of low power manipulation of spin. In this work, we report improvement of perpendicular magnetic anisotropy and VCMA efficienty by Ir and W doping in an ultrathin FeB/Fe free layer in magnetic tunnel junction. We found that W doping is effective to improve the perpendicular magnetic anisotropy and Ir doping enhance the VCMA coefficient by a factor of 4.7 compared with the standard structure.