The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Trends of ferroelectric HfO2 technologies

[20p-141-1~13] Trends of ferroelectric HfO2 technologies

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 141 (141+142)

Tomoaki Yamada(Nagoya Univ.), Shosuke Fujii(Toshiba Memory)

6:00 PM - 6:15 PM

[20p-141-12] Clarification of Endurance Failure Mechanisms for HfO2-based Ferroelectric Tunnel Junction Memory

Marina Yamaguchi1, Shosuke Fujii1, Shoichi Kabuyanagi1, Yuuichi Kamimuta1, Tsunehiro Ino1, Yasushi Nakasaki1, Riichiro Takaishi1, Reika Ichihara1, Masumi Saitoh1 (1.Toshiba Memory Corp.)

Keywords:Ferroelectric Tunnel Junction, HfO2

Resistive switching memories (ReRAMs) are attracting much attention for future non-volatile memory applications. Among them, a HfO2-based ferroelectric tunnel junction (FTJ) memory is a promising candidate as we have reported its device characteristics suitable for low-power high-density applications, such as low operation current in nA-range, self-compliance, intrinsic diode properties, as well as good compatibility with CMOS process. To apply the HfO2 FTJ to such applications, it is necessary to ensure long-term reliability, e.g., long data retention time and sufficient cycling endurance. In this study, we conducted a detailed investigation on failure mechanisms of the HfO2 FTJ during set/reset cycling by combining methodology of the well-known reliability evaluation (TDDB) and the memory-specific evaluation (cycling endurance).