[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

[20p-141-8] Prospect of the HfO₂ ferroelectric thin films for the use of ferroelectric gate transistor

〇Norifumi Fujimura¹, Kenshi Takada¹, Takeshi Yoshimura¹ (1.Osaka Pref. Univ.)

Keywords:Ferroelectrics, adaptive learning neuromorphic devices, negative capacitance

Ferroelectric gate FET, in which the conventional gate insulator is replaced with a ferroelectric thin films has several advantages such as ultimate scalability and nondestructive readout characteristics. Moreover, it is attiractive for the super low power consumption devises such as adaptive learning neuromorphic devices and negative capacitance transistors. My talk will cover the advantages and the issues for the used of the material systems based on HfO₂ for the ferroelectric gate FETs.