[20p-144-1~12] Renaissance and Novel Development of Poly Si TFT Technology

[20p-144-10] Challenge for Fabrication of Poly-Si TFT on Cellulose Nanopaper(CNP)
--- Approach to Basic Technology ---

〇Susumu Horita¹ (1.JAIST)

Keywords:Si-TFT, cellulose nanopaper, low-temperature process

We investigate a fabrication process of poly-Si TFT on a cellulose nanopaper (CNP). Although it is very difficult to fabricate the TFT without heat damage of CNP, we propose a few original techniques for getting it. One is to use crystallization-induction layer of YSZ and pulsed laser annealing for solid-state crystallization of an Si film. The other is to reduce a amount of Si-OH bonds which are contained in the low-temperature deposited Si oxide film by a special annealing process at 150oC for 30 min.