1:45 PM - 2:15 PM
[20p-144-2] Trend of R&D of Low Temperature Poly-Si and Low Temperature Crystallization of Group-４ Semiconductor Thin Film
Keywords:LTPS, Tunneling Dielectric TFT, enhancement of crystallization by hydrogen
Thin-film transistors (TFTs) utilizing the LTPS (Low-Temperature Polycrystalline-Si) as their active areas are very crucial for the system-on-glass. The liquid-crystal display or organic light emitting diode display are fabricated in the display area and their controls are performed by the micro-computer that is formed in the peripheral area. Therefore, the requirements for the recrystallized Si film are a high quality, a large grain formation and a position control of nucleation. To satisfy those requirements, many conpromising crystallization methods have been proposed.
In this paper, after reviewing the LTPS history, firstly, the acceleration of the ELA crystal velocity of a-Si by hydrogen molecules is discussed. Secondly, a soft X-ray crystallization of a-Si, Ge and SixGe1-x films is shown. Thirdly, the novel TFT utilizing tunnel effect, Tunneling Dielectric TFT (TDTFT), is introduced.
In this paper, after reviewing the LTPS history, firstly, the acceleration of the ELA crystal velocity of a-Si by hydrogen molecules is discussed. Secondly, a soft X-ray crystallization of a-Si, Ge and SixGe1-x films is shown. Thirdly, the novel TFT utilizing tunnel effect, Tunneling Dielectric TFT (TDTFT), is introduced.